SI4931DY-T1-GE3
Part NoSI4931DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2P-CH 12V 6.7A 8SOIC
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)12V
Current-ContinuousDrain(Id)@25°C6.7A
RdsOn(Max)@Id18mOhm @ 8.9A, 4.5V
Vgs1V @ 350µA
Vgs(th)(Max)@Id52nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds1.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage-
Grade-
Qualification
In Stock:
11910
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1918 | |
| 10 | 1.168 | |
| 100 | 1.1322 | |
| 1000 | 1.0965 | |
| 10000 | 1.0488 |
Associated Product
