SI4932DY-T1-GE3
RoHS

SI4932DY-T1-GE3

Part NoSI4932DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 30V 8A 8SOIC
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ECAD Module SI4932DY-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C8A
RdsOn(Max)@Id15mOhm @ 7A, 10V
Vgs2.5V @ 250µA
Vgs(th)(Max)@Id48nC @ 10V
GateCharge(Qg)(Max)@Vgs1750pF @ 15V
InputCapacitance(Ciss)(Max)@Vds3.2W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage-
Grade-
Qualification
In Stock: 8298
Pricing
QTY UNIT PRICE EXT PRICE
1 1.2015
10 1.1775
100 1.1414
1000 1.1054
10000 1.0573
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product