SI5418DU-T1-GE3
RoHS

SI5418DU-T1-GE3

Part NoSI5418DU-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 12A PPAK
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ECAD Module SI5418DU-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)14.5mOhm @ 7.7A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs30 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1350 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.1W (Ta), 31W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® ChipFET™ Single
SupplierDevicePackagePowerPAK® ChipFET™ Single
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 13712
Pricing
QTY UNIT PRICE EXT PRICE
1 1.2573
10 1.2322
100 1.1944
1000 1.1567
10000 1.1064
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product