SI5475DDC-T1-GE3
Part NoSI5475DDC-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 12V 6A 1206-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)32mOhm @ 5.4A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs50 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)1600 pF @ 6 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.3W (Ta), 5.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType1206-8 ChipFET™
SupplierDevicePackage8-SMD, Flat Lead
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
19119
Pricing
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Associated Product
