SI5513CDC-T1-GE3
Part NoSI5513CDC-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N/P-CH 20V 4A/3.7A 1206-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C4A, 3.7A
RdsOn(Max)@Id55mOhm @ 4.4A, 4.5V
Vgs1.5V @ 250µA
Vgs(th)(Max)@Id4.2nC @ 5V
GateCharge(Qg)(Max)@Vgs285pF @ 10V
InputCapacitance(Ciss)(Max)@Vds3.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SMD, Flat Lead
Package/Case1206-8 ChipFET™
SupplierDevicePackage-
Grade-
Qualification
In Stock:
16214
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.648 | |
| 10 | 0.635 | |
| 100 | 0.6156 | |
| 1000 | 0.5962 | |
| 10000 | 0.5702 |
Associated Product
