SI5515CDC-T1-GE3
Part NoSI5515CDC-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N/P-CH 20V 4A 1206-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C4A
RdsOn(Max)@Id36mOhm @ 6A, 4.5V
Vgs800mV @ 250µA
Vgs(th)(Max)@Id11.3nC @ 5V
GateCharge(Qg)(Max)@Vgs632pF @ 10V
InputCapacitance(Ciss)(Max)@Vds3.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SMD, Flat Lead
Package/Case1206-8 ChipFET™
SupplierDevicePackage-
Grade-
Qualification
In Stock:
15824
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.744 | |
| 10 | 0.7291 | |
| 100 | 0.7068 | |
| 1000 | 0.6845 | |
| 10000 | 0.6547 |
Associated Product
