SI5517DU-T1-GE3
RoHS

SI5517DU-T1-GE3

Part NoSI5517DU-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N/P-CH 20V 6A CHIPFET
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ECAD Module SI5517DU-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C6A
RdsOn(Max)@Id39mOhm @ 4.4A, 4.5V
Vgs1V @ 250µA
Vgs(th)(Max)@Id16nC @ 8V
GateCharge(Qg)(Max)@Vgs520pF @ 10V
InputCapacitance(Ciss)(Max)@Vds8.3W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® ChipFET™ Dual
Package/CasePowerPAK® ChipFet Dual
SupplierDevicePackage-
Grade-
Qualification
In Stock: 10005
Pricing
QTY UNIT PRICE EXT PRICE
1 1.2204
10 1.196
100 1.1594
1000 1.1228
10000 1.074
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product