SI5975DC-T1-GE3
Part NoSI5975DC-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2P-CH 12V 3.1A 1206-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)12V
Current-ContinuousDrain(Id)@25°C3.1A
RdsOn(Max)@Id86mOhm @ 3.1A, 4.5V
Vgs450mV @ 1mA (Min)
Vgs(th)(Max)@Id9nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds1.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SMD, Flat Lead
Package/Case1206-8 ChipFET™
SupplierDevicePackage
Grade
Qualification
In Stock:
2935
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Associated Product
