SI6467BDQ-T1-GE3
RoHS

SI6467BDQ-T1-GE3

Part NoSI6467BDQ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 12V 6.8A 8TSSOP
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ECAD Module SI6467BDQ-T1-GE3
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Specification
PackageCut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C6.8A (Ta)
DriveVoltage(MaxRdsOn-
MinRdsOn)12.5mOhm @ 8A, 4.5V
RdsOn(Max)@Id850mV @ 450µA
Vgs70 nC @ 4.5 V
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)Surface Mount
OperatingTemperature8-TSSOP
MountingType8-TSSOP (0.173, 4.40mm Width)
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 9180
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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