SI7101DN-T1-GE3
Part NoSI7101DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 35A PPAK 1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)7.2mOhm @ 15A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs±25V
Vgs(th)(Max)@Id3595 pF @ 15 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds3.7W (Ta), 52W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 1212-8
MountingTypePowerPAK® 1212-8
SupplierDevicePackage102 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
16950
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.296 | |
| 10 | 1.2701 | |
| 100 | 1.2312 | |
| 1000 | 1.1923 | |
| 10000 | 1.1405 |
Associated Product
