SI7102DN-T1-GE3
Part NoSI7102DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 12V 35A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)3.8mOhm @ 15A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs110 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)3720 pF @ 6 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.8W (Ta), 52W (Tc)
PowerDissipation(Max)-50°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
17656
Pricing
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Associated Product
