SI7119DN-T1-E3
Part NoSI7119DN-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 200V 3.8A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C3.8A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)1.05Ohm @ 1A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs25 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)666 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.7W (Ta), 52W (Tc)
PowerDissipation(Max)-50°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8
Grade
Qualification
In Stock:
16576
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0476 | |
| 10 | 1.0266 | |
| 100 | 0.9952 | |
| 1000 | 0.9638 | |
| 10000 | 0.9219 |
Associated Product
