SI7123DN-T1-GE3
Part NoSI7123DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 10.2A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C10.2A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)10.6mOhm @ 15A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs90 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)3729 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.5W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
18303
Pricing
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Associated Product
