SI7170DP-T1-GE3
RoHS

SI7170DP-T1-GE3

Part NoSI7170DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 40A PPAK SO-8
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ECAD Module SI7170DP-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C40A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)3.4mOhm @ 15A, 10V
RdsOn(Max)@Id2.6V @ 250µA
Vgs100 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4355 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5W (Ta), 48W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 23771
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product