SI7172DP-T1-GE3
Part NoSI7172DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 25A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)70mOhm @ 5.9A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs77 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2250 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5.4W (Ta), 96W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SO-8
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
Qualification
In Stock:
22203
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.2222 | |
| 10 | 2.1778 | |
| 100 | 2.1111 | |
| 1000 | 2.0444 | |
| 10000 | 1.9555 |
Associated Product
