SI7317DN-T1-GE3
RoHS

SI7317DN-T1-GE3

Part NoSI7317DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 150V 2.8A PPAK1212-8
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ECAD Module SI7317DN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)150 V
Current-ContinuousDrain(Id)@25°C2.8A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)1.2Ohm @ 500mA, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs9.8 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)365 pF @ 75 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.2W (Ta), 19.8W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 10526
Pricing
QTY UNIT PRICE EXT PRICE
1 0.9856
10 0.9659
100 0.9363
1000 0.9068
10000 0.8673
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product