SI7403BDN-T1-GE3
Part NoSI7403BDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 8A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)74mOhm @ 5.1A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs15 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds3.1W (Ta), 9.6W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 1212-8
MountingTypePowerPAK® 1212-8
SupplierDevicePackage430 pF @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9054
Pricing
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Associated Product
