SI7407DN-T1-GE3
Part NoSI7407DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 12V 9.9A PPAK 1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C9.9A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)12mOhm @ 15.6A, 4.5V
RdsOn(Max)@Id1V @ 400µA
Vgs59 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.5W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 1212-8
MountingTypePowerPAK® 1212-8
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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6324
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Associated Product
