SI7431DP-T1-GE3
Part NoSI7431DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 200V 2.2A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C2.2A (Ta)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)174mOhm @ 3.8A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs135 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.9W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
19973
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.7335 | |
| 10 | 3.6588 | |
| 100 | 3.5468 | |
| 1000 | 3.4348 | |
| 10000 | 3.2855 |
Associated Product
