SI7434DP-T1-GE3
RoHS

SI7434DP-T1-GE3

Part NoSI7434DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 250V 2.3A PPAK SO-8
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ECAD Module SI7434DP-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)250 V
Current-ContinuousDrain(Id)@25°C2.3A (Ta)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)155mOhm @ 3.8A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs50 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.9W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 18961
Pricing
QTY UNIT PRICE EXT PRICE
1 3.5636
10 3.4923
100 3.3854
1000 3.2785
10000 3.136
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product