SI7450DP-T1-E3
RoHS

SI7450DP-T1-E3

Part NoSI7450DP-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 3.2A PPAK SO-8
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ECAD Module SI7450DP-T1-E3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C3.2A (Ta)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)80mOhm @ 4A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs42 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.9W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 41238
Pricing
QTY UNIT PRICE EXT PRICE
1 2.8179
10 2.7615
100 2.677
1000 2.5925
10000 2.4798
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product