SI7478DP-T1-GE3
RoHS

SI7478DP-T1-GE3

Part NoSI7478DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 60V 15A PPAK SO-8
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ECAD Module SI7478DP-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C15A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)7.5mOhm @ 20A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs160 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.9W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SO-8
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
Qualification
In Stock: 16752
Pricing
QTY UNIT PRICE EXT PRICE
1 2.6578
10 2.6046
100 2.5249
1000 2.4452
10000 2.3389
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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