SI7601DN-T1-GE3
Part NoSI7601DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 16A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C16A (Tc)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)19.2mOhm @ 11A, 4.5V
RdsOn(Max)@Id1.6V @ 250µA
Vgs27 nC @ 5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)1870 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.8W (Ta), 52W (Tc)
PowerDissipation(Max)-50°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
8073
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Associated Product
