SI7792DP-T1-GE3
Part NoSI7792DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 40.6A/60A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesSkyFET®, TrenchFET® Gen III
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C40.6A (Ta), 60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)2.1mOhm @ 20A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs135 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4735 pF @ 15 V
InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Body)
FETFeature6.25W (Ta), 104W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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9166
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Associated Product
