SI7802DN-T1-GE3
RoHS

SI7802DN-T1-GE3

Part NoSI7802DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 250V 1.24A PPAK
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ECAD Module SI7802DN-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)250 V
Current-ContinuousDrain(Id)@25°C1.24A (Ta)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)435mOhm @ 1.95A, 10V
RdsOn(Max)@Id3.6V @ 250µA
Vgs21 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.5W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 6724
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product