SI7812DN-T1-GE3
RoHS

SI7812DN-T1-GE3

Part NoSI7812DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 75V 16A PPAK1212-8
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ECAD Module SI7812DN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)75 V
Current-ContinuousDrain(Id)@25°C16A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)37mOhm @ 7.2A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)840 pF @ 35 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.8W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 15059
Pricing
QTY UNIT PRICE EXT PRICE
1 2.38
10 2.3324
100 2.261
1000 2.1896
10000 2.0944
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Diodes Incorporated
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