SI7820DN-T1-GE3
RoHS

SI7820DN-T1-GE3

Part NoSI7820DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 1.7A PPAK1212-8
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ECAD Module SI7820DN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C1.7A (Ta)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)240mOhm @ 2.6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs18 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.5W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 15918
Pricing
QTY UNIT PRICE EXT PRICE
1 1.5347
10 1.504
100 1.458
1000 1.4119
10000 1.3505
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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