SI7860DP-T1-GE3
Part NoSI7860DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 11A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C11A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)8mOhm @ 18A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs18 nC @ 4.5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.8W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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available for immediate sale in a store
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Associated Product
