SI7882DP-T1-E3
RoHS

SI7882DP-T1-E3

Part NoSI7882DP-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 12V 13A PPAK SO-8
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ECAD Module SI7882DP-T1-E3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C13A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)5.5mOhm @ 17A, 4.5V
RdsOn(Max)@Id1.4V @ 250µA
Vgs30 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.9W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 18258
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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