SI7888DP-T1-E3
Part NoSI7888DP-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 9.4A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C9.4A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)12mOhm @ 12.4A, 10V
RdsOn(Max)@Id2V @ 250µA
Vgs10.5 nC @ 5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.8W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
19663
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Associated Product
