SI7898DP-T1-E3
RoHS

SI7898DP-T1-E3

Part NoSI7898DP-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 150V 3A PPAK SO-8
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ECAD Module SI7898DP-T1-E3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)150 V
Current-ContinuousDrain(Id)@25°C3A (Ta)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)85mOhm @ 3.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs21 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.9W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 16046
Pricing
QTY UNIT PRICE EXT PRICE
1 1.5312
10 1.5006
100 1.4546
1000 1.4087
10000 1.3475
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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