SI7900AEDN-T1-GE3
RoHS

SI7900AEDN-T1-GE3

Part NoSI7900AEDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 20V 6A PPAK 1212
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ECAD Module SI7900AEDN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Common Drain
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C6A
RdsOn(Max)@Id26mOhm @ 8.5A, 4.5V
Vgs900mV @ 250µA
Vgs(th)(Max)@Id16nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds1.5W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8 Dual
Package/CasePowerPAK® 1212-8 Dual
SupplierDevicePackage-
Grade-
Qualification
In Stock: 12253
Pricing
QTY UNIT PRICE EXT PRICE
1 0.5499
10 0.5389
100 0.5224
1000 0.5059
10000 0.4839
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product