SI7911DN-T1-GE3
RoHS

SI7911DN-T1-GE3

Part NoSI7911DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2P-CH 20V 4.2A PPAK 1212
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ECAD Module SI7911DN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C4.2A
RdsOn(Max)@Id51mOhm @ 5.7A, 4.5V
Vgs1V @ 250µA
Vgs(th)(Max)@Id15nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds1.3W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8 Dual
Package/CasePowerPAK® 1212-8 Dual
SupplierDevicePackage-
Grade-
Qualification
In Stock: 16371
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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