SI7960DP-T1-E3

SI7960DP-T1-E3

Part NoSI7960DP-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 60V 6.2A PPAK SO8
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ECAD Module SI7960DP-T1-E3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)60V
Current-ContinuousDrain(Id)@25°C6.2A
RdsOn(Max)@Id21mOhm @ 9.7A, 10V
Vgs3V @ 250µA
Vgs(th)(Max)@Id75nC @ 10V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds1.4W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8 Dual
Package/CasePowerPAK® SO-8 Dual
SupplierDevicePackage
Grade
Qualification
In Stock: 13903
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Shipping Information
Shiped FromShenZhen Warehourse
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Associated Product