SI8435DB-T1-E1
RoHS

SI8435DB-T1-E1

Part NoSI8435DB-T1-E1
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 10A 4MICROFOOT
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ECAD Module SI8435DB-T1-E1
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn1.5V, 4.5V
MinRdsOn)41mOhm @ 1A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs35 nC @ 5 V
Vgs(th)(Max)@Id±5V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.78W (Ta), 6.25W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature4-Microfoot
MountingType4-XFBGA, CSPBGA
SupplierDevicePackage1600 pF @ 10 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 4389
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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