SIA108DJ-T1-GE3
Part NoSIA108DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 80V 6.6A/12A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C6.6A (Ta), 12A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)38mOhm @ 4A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs13 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)545 pF @ 40 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 19W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SC-70-6
GateCharge(Qg)(Max)@VgsPowerPAK® SC-70-6
Grade
Qualification
In Stock:
6509
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7392 | |
| 10 | 0.7244 | |
| 100 | 0.7022 | |
| 1000 | 0.6801 | |
| 10000 | 0.6505 |
Associated Product
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