SIA406DJ-T1-GE3
RoHS

SIA406DJ-T1-GE3

Part NoSIA406DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 12V 4.5A PPAK SC70-6
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ECAD Module SIA406DJ-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C4.5A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)19.8mOhm @ 10.8A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs23 nC @ 5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds3.5W (Ta), 19W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SC-70-6
MountingTypePowerPAK® SC-70-6
SupplierDevicePackage1380 pF @ 6 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 9245
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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