SIA421DJ-T1-GE3
Part NoSIA421DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 12A PPAK SC70-6
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)35mOhm @ 5.3A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs29 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)950 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 19W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
22284
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1058 | |
| 10 | 1.0837 | |
| 100 | 1.0505 | |
| 1000 | 1.0173 | |
| 10000 | 0.9731 |
Associated Product
