SIA425EDJ-T1-GE3
Part NoSIA425EDJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 4.5A PPAK SC70-6
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C4.5A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)60mOhm @ 4.2A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs-
Vgs(th)(Max)@Id±12V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.9W (Ta), 15.6W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SC-70-6
MountingTypePowerPAK® SC-70-6
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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8777
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Associated Product
