SIA4263DJ-T1-GE3
Part NoSIA4263DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionP-CHANNEL 20-V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen III
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C7.5A (Ta), 12A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)22mOhm @ 7.5A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs52.2 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)1825 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.29W (Ta), 15.6W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3900
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6554 | |
| 10 | 0.6423 | |
| 100 | 0.6226 | |
| 1000 | 0.603 | |
| 10000 | 0.5768 |
Associated Product
