SIA436DJ-T1-GE3
RoHS

SIA436DJ-T1-GE3

Part NoSIA436DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 8V 12A PPAK SC70-6
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ECAD Module SIA436DJ-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)8 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn1.2V, 4.5V
MinRdsOn)9.4mOhm @ 15.7A, 4.5V
RdsOn(Max)@Id800mV @ 250µA
Vgs25.2 nC @ 5 V
Vgs(th)(Max)@Id±5V
Vgs(Max)1508 pF @ 4 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 19W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 17874
Pricing
QTY UNIT PRICE EXT PRICE
1 0.5429
10 0.532
100 0.5158
1000 0.4995
10000 0.4778
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product