SIA438EDJ-T1-GE3
RoHS

SIA438EDJ-T1-GE3

Part NoSIA438EDJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 6A PPAK SC70-6
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ECAD Module SIA438EDJ-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)46mOhm @ 3.9A, 4.5V
RdsOn(Max)@Id1.4V @ 250µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±12V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.4W (Ta), 11.4W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SC-70-6
MountingTypePowerPAK® SC-70-6
SupplierDevicePackage350 pF @ 10 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 4008
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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