SIA439EDJ-T1-GE3
RoHS

SIA439EDJ-T1-GE3

Part NoSIA439EDJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 28A PPAK SC70-6
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ECAD Module SIA439EDJ-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C28A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)16.5mOhm @ 5A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs69 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)2410 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 19W (Tc)
PowerDissipation(Max)-50°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 8398
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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