SIA444DJT-T4-GE3
Part NoSIA444DJT-T4-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 11A/12A PPAK
Datasheet
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETType11A (Ta), 12A (Tc)
TechnologyN-Channel
DraintoSourceVoltage(Vdss)MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C30 V
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)17mOhm @ 7.4A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs15 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)560 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 19W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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3149
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