SIA456DJ-T1-GE3
Part NoSIA456DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 2.6A PPAK SC70
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C2.6A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)1.38Ohm @ 750mA, 4.5V
RdsOn(Max)@Id1.4V @ 250µA
Vgs14.5 nC @ 10 V
Vgs(th)(Max)@Id±16V
Vgs(Max)350 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 19W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
12766
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.765 | |
| 10 | 0.7497 | |
| 100 | 0.7268 | |
| 1000 | 0.7038 | |
| 10000 | 0.6732 |
Associated Product
