SIA485DJ-T1-GE3
RoHS

SIA485DJ-T1-GE3

Part NoSIA485DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 150V 1.6A PPAK SC70
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ECAD Module SIA485DJ-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)150 V
Current-ContinuousDrain(Id)@25°C1.6A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)2.6Ohm @ 500mA, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs6.3 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)155 pF @ 75 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature15.6W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 11477
Pricing
QTY UNIT PRICE EXT PRICE
1 0.5824
10 0.5708
100 0.5533
1000 0.5358
10000 0.5125
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product