SIA811DJ-T1-GE3
RoHS

SIA811DJ-T1-GE3

Part NoSIA811DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 4.5A PPAK SC70-6
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ECAD Module SIA811DJ-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesLITTLE FOOT®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C4.5A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)94mOhm @ 2.8A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs13 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)355 pF @ 10 V
InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Isolated)
FETFeature1.9W (Ta), 6.5W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6 Dual
SupplierDevicePackagePowerPAK® SC-70-6 Dual
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 14955
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product