SIA950DJ-T1-GE3
RoHS

SIA950DJ-T1-GE3

Part NoSIA950DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 190V 0.95A SC70-6
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ECAD Module SIA950DJ-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesLITTLE FOOT®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)190V
Current-ContinuousDrain(Id)@25°C950mA
RdsOn(Max)@Id3.8Ohm @ 360mA, 4.5V
Vgs1.4V @ 250µA
Vgs(th)(Max)@Id4.5nC @ 10V
GateCharge(Qg)(Max)@Vgs90pF @ 100V
InputCapacitance(Ciss)(Max)@Vds7W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6 Dual
Package/CasePowerPAK® SC-70-6 Dual
SupplierDevicePackage-
Grade-
Qualification
In Stock: 4293
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product