SIB411DK-T1-E3
RoHS

SIB411DK-T1-E3

Part NoSIB411DK-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 9A PPAK SC75-6
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ECAD Module SIB411DK-T1-E3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)66mOhm @ 3.3A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs15 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.4W (Ta), 13W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SC-75-6
MountingTypePowerPAK® SC-75-6
SupplierDevicePackage470 pF @ 10 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 2924
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product