SIB412DK-T1-GE3
Part NoSIB412DK-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 9A PPAK SC75-6
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)34mOhm @ 6.6A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs10.16 nC @ 5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)535 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.4W (Ta), 13W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-75-6
SupplierDevicePackagePowerPAK® SC-75-6
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
4035
Pricing
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Associated Product
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